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International Rectifier Electronic Components Datasheet

IRFP3077PBF Datasheet

Power MOSFET

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Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Worldwide Best RDS(on) in TO-247
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
G
PD - 97126
IRFP3077PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
75V
2.8m:
3.3m:
ID (Silicon Limited) 200A c
S ID (Package Limited) 120A
D
S
GD
TO-247AC
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dV/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current c
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case j
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient j
D
Drain
S
Source
Max.
200c
140c
120
850
340
2.3
± 20
2.5
-55 to + 175
300
10lbxin (1.1Nxm)
200
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.24
–––
Max.
0.44
–––
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
3/3/08
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRFP3077PBF Datasheet

Power MOSFET

No Preview Available !

IRFP3077PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Input Resistance
75 ––– –––
––– 0.091 –––
––– 2.8 3.3
V VGS = 0V, ID = 250μA
dV/°C Reference to 25°C, ID = 5mA
gmΩ VGS = 10V, ID = 75A
2.0 ––– 4.0 V VDS = VGS, ID = 250μA
––– ––– 20 μA VDS = 75V, VGS = 0V
––– ––– 250
VDS = 75V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– 1.2 ––– Ω f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
160
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
iEffective Output Capacitance (Energy Related) –––
hEffective Output Capacitance (Time Related)
–––
–––
160
37
42
25
87
69
95
9400
820
350
1090
1260
–––
220
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 50V, ID = 75A
nC ID = 75A
gVDS = 38V
VGS = 10V
ns VDD = 38V
ID = 75A
gRG = 2.1Ω
VGS = 10V
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
jVGS = 0V, VDS = 0V to 60V , See Fig.11
hVGS = 0V, VDS = 0V to 60V , See Fig. 5
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãdi(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 200 A MOSFET symbol
––– ––– 850
showing the
integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 75A, VGS = 0V
––– 42 63 ns TJ = 25°C
VR = 64V,
––– 50 75
TJ = 125°C
––– 59 89 nC TJ = 25°C
gIF = 75A
di/dt = 100A/μs
––– 86 130
TJ = 125°C
––– 2.5 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.028mH
RG = 25Ω, IAS = 120A, VGS =10V. Part not recommended for use
above this value .
„ ISD 75A, di/dt 400A/μs, VDD V(BR)DSS, TJ 175°C.
2
… Pulse width 400μs; duty cycle 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ Rθ is measured at TJ approximately 90°C
www.irf.com
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Part Number IRFP3077PBF
Description Power MOSFET
Maker International Rectifier
Total Page 8 Pages
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