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IRFP31N50L - Power MOSFET

Features

  • D Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
  • VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www. irf. com 7 DataSheet 4 U . com www. DataSheet4U www. DataSheet4U. com 4U. com www. DataSheet4U. com IRFP31N50L TO - 247 Package Outline Dimensions are shown in millimeters (inches) 1 5.90 (.62 6) 1 5.30 (.60 2) -B- 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 94081 SMPS MOSFET IRFP31N50L Applications HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.
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