IRFP3206PBF - HEXFET Power MOSFET

Features

t type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = D.

International Rectifier

Datasheet Details

Part number	IRFP3206PBF
Manufacturer	International Rectifier
File Size	328.70 KB
Description	HEXFET Power MOSFET
Datasheet	IRFP3206PBF Datasheet
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Full PDF Text Transcription

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PD - 97127 IRFP3206PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G www.DataSheet4U.com D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 60V 2.4m: 3.

Published: Jun 21, 2008 |