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IRFP3415 - Power MOSFET

Description

Fifth Generation Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • ) 2.50 (.089) 1.50 (.059) 4 20.30 (.800) 19.70 (.775) 1 2 3 2X 5.50 (.217) 4.50 (.177) NOTES: 1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 93962A IRFP3415 HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V G S RDS(on) = 0.042Ω ID = 43A Description Fifth Generation Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices.
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