IRFP4110PBF

The IRFP4110PBF is HEXFET Power MOSFET designed by International Rectifier.

Product Overview

International Rectifier

Part number	IRFP4110PBF
Manufacturer	International Rectifier
File Size	387.27 KB
Description	HEXFET Power MOSFET
Datasheet	IRFP4110PBF-InternationalRectifier.pdf
Additional preview pages of the IRFP4110PBF datasheet.

is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. Tjmax (assumed as 7. ∆T = Allowable rise in junction temperature, not to exceed 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = t av.
f ZthJC(D, tav) = Transient th.

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Published: Jun 10, 2014 |