IRFP4368PBF - HEXFET Power MOSFET

Features

s , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts.

International Rectifier

Datasheet Details

Part number	IRFP4368PBF
Manufacturer	International Rectifier
File Size	305.33 KB
Description	HEXFET Power MOSFET
Datasheet	IRFP4368PBF Datasheet
Additional preview pages of the IRFP4368PBF datasheet.

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Full PDF Text Transcription

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PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S 75V 1.46mΩ 1.

Published: Mar 18, 2011 |