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IRFP4710PBF - Power MOSFET

Key Features

  • ted by max. junction temperature. ‚ Starting TJ = 25°C, L = 190µH RG = 25Ω, IAS = 45A, VGS = 10V.
  • ISD ≤ 45A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
  • Pulse width ≤ 400µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on.

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Full PDF Text Transcription for IRFP4710PBF (Reference)

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PD - 95055 IRFP4710PbF Applications l High frequency DC-DC converters l Motor Control l Uninterruptible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to ...

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ble Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.