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International Rectifier Electronic Components Datasheet

IRFP7430PBF Datasheet

Power MOSFET

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StrongIRFETTM
IRFP7430PbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free*
D
G
S
G
Gate
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.0mΩ
1.3mΩ
c404A
195A
D
S
D
G
TO-247AC
IRFP7430PbF
D
Drain
S
Source
Ordering Information
Base Part Number
IRFP7430PbF
Package Type
TO-247
Standard Pack
Form
Tube
Quantity
50
Complete Part Number
IRFP7430PbF
6.0
ID = 100A
4.0
TJ = 125°C
2.0
TJ = 25°C
0.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
500
Limited By Package
400
300
200
100
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
February 19, 2015


International Rectifier Electronic Components Datasheet

IRFP7430PBF Datasheet

Power MOSFET

No Preview Available !

IRFP7430PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
eSingle Pulse Avalanche Energy
EAS (Thermally limited)
lSingle Pulse Avalanche Energy
ÃdIAR Avalanche Current
dEAR Repetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
Symbol
kJunction-to-Case
Parameter
Case-to-Sink, Flat Greased Surface
ÃjJunction-to-Ambient
Max.
404™
286™
195
1524
366
2.4
± 20
-55 to + 175
300
x x10lbf in (1.1N m)
722
1405
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.24
–––
Max.
0.41
–––
40
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
Min. Typ. Max.
40 ––– –––
––– 0.014 –––
––– 1.0 1.3
1.2 –––
2.2 ––– 3.9
––– ––– 1.0
––– ––– 150
––– ––– 100
––– ––– -100
––– 2.1 –––
Units
V
V/°C
mΩ
mΩ
V
μA
nA
Ω
Conditions
VGS = 0V, ID = 250μA
dReference to 25°C, ID = 1.0mA
gVGS = 10V, ID = 100A
gVGS = 6.0V, ID = 50A
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.14mH
RG = 50Ω, IAS = 100A, VGS =10V.
„ ISD 100A, di/dt 990A/μs, VDD V(BR)DSS, TJ 175°C.
… Pulse width 400μs; duty cycle 2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
Š Limited by TJmax, starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 53A,
VGS =10V.
* Halogen -Free since April 30, 2014
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
February 19, 2015


Part Number IRFP7430PBF
Description Power MOSFET
Maker International Rectifier
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