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IRFPS3810 Datasheet - International Rectifier

HEXFET Power MOSFET

IRFPS3810 Features

* 44] 0.25 [.010] S ECT ION E-E NOT ES : 1. DIMENSIONING AND T OLERANCING PER ASME Y14.5M-1994. 2. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES] 3. CONT ROLLING DIMENSION: MILLIMET ER 4. OUT LINE CONFORMS T O JEDEC OUT LINE T O-274AA 2.35 [.092] 1.65 [.065] LEAD ASS IGNMENT S MOS FET 1 - GAT E 2

IRFPS3810 General Description

The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer.

IRFPS3810 Datasheet (111.32 KB)

Preview of IRFPS3810 PDF

Datasheet Details

Part number:

IRFPS3810

Manufacturer:

International Rectifier

File Size:

111.32 KB

Description:

Hexfet power mosfet.
PD - 93912A IRFPS3810 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temp.

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IRFPS3810 HEXFET Power MOSFET International Rectifier

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