Datasheet Details
| Part number | IRFPS3810 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 111.32 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
 IRFPS3810 Datasheet
|
|
|
| Part number | IRFPS3810 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 111.32 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
IRFPS3810 Datasheet
|
|
|
|
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Super-247™ Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
PD - 93912A IRFPS3810 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.
| Part Number | Description |
|---|---|
| IRFPS3810PbF | HEXFET Power MOSFET |
| IRFPS3815 | HEXFET Power MOSFET |
| IRFPS3815PBF | HEXFET Power MOSFET |
| IRFPS38N60L | HEXFET Power MOSFET |
| IRFPS38N60LPBF | HEXFET Power MOSFET |
| IRFPS30N60K | SMPS MOSFET |
| IRFPS30N60KPBF | SMPS MOSFET |
| IRFPS35N50L | HEXFET Power MOSFET |
| IRFPS35N50LPBF | SMPS MOSFET |
| IRFPS37N50A | HEXFET Power MOSFET |