IRFPS3810 Datasheet, MOSFET, International Rectifier

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IRFPS3810 Features and benefits

harge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com APPROVED IRFPS3810 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Consideration.

IRFPS3810 Application

Super-247™ Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt .

IRFPS3810 Description

The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power.

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