IRFPS3815 mosfet equivalent, hexfet power mosfet.
ductance Current Transformer
-
*
+
RG VGS
* dv/dt controlled by RG
* ISD controlled by Duty Factor "D"
* D.U.T. - Device Under Test
+ VDD
*
Rev.
Super-247™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt .
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power.
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