lane
* Low Leakage Inductance Current Transformer
-
*
+
RG VGS
* dv/dt controlled by RG
* ISD controlled by Duty Factor "D"
* D.U.T. - Device .
www.DataSheet4U.com
Super-247™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VG.
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power.
Image gallery
TAGS
Manufacturer
Related datasheet
