Download the IRFR2905ZPBF datasheet PDF.
This datasheet also covers the IRFU2905ZPBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 55V
G S
RDS(on) = 14.5mΩ ID = 42A.
Note: The manufacturer provides a single datasheet file (IRFU2905ZPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRFR2905ZPBF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRFR2905ZPBF. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 95943A AUTOMOTIVE MOSFET IRFR2905ZPbF IRFU2905ZPbF HEXFET® Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resistanc...
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eatures l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V G S RDS(on) = 14.5mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
IRFR2905ZPBF Datasheet
