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International Rectifier Electronic Components Datasheet

IRFR3607PBF Datasheet

Power MOSFET

No Preview Available !

Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97312B
IRFR3607PbF
IRFU3607PbF
HEXFET® Power MOSFET
D
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
S
ID (Package Limited)
75V
7.34m
c 9.0m
80A
56A
D
S
S
D
G
G
D-Pak
I-Pak
IRFR3607PbF IRFU3607PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
e EAS (Thermally limited) Single Pulse Avalanche Energy
Ãd IAR
Avalanche Current
g EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
k Junction-to-Case
j Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
Max.
80™
56™
56
310
140
0.96
± 20
27
-55 to + 175
300
120
46
14
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
04/30/2010


International Rectifier Electronic Components Datasheet

IRFR3607PBF Datasheet

Power MOSFET

No Preview Available !

IRFR/U3607PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
75 ––– –––
––– 0.096 –––
––– 7.34 9.0
2.0 ––– 4.0
––– ––– 20
V VGS = 0V, ID = 250µA
d V/°C Reference to 25°C, ID = 5mA
g mVGS = 10V, ID = 46A
V VDS = VGS, ID = 100µA
µA VDS = 75V, VGS = 0V
IGSS
Gate-to-Source Forward Leakage
––– ––– 250
––– ––– 100
VDS = 60V, VGS = 0V, TJ = 125°C
nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
115 ––– –––
––– 56 84
––– 13 –––
––– 16 –––
––– 40 –––
S VDS = 50V, ID = 46A
nC ID = 46A
g VDS = 38V
VGS = 10V
ID = 46A, VDS =0V, VGS = 10V
RG(int)
Internal Gate Resistance
––– 0.55 –––
td(on)
Turn-On Delay Time
––– 16 –––
tr
Rise Time
––– 110 –––
td(off)
Turn-Off Delay Time
––– 43 –––
tf
Fall Time
––– 96 –––
Ciss
Input Capacitance
––– 3070 –––
Coss
Output Capacitance
––– 280 –––
Crss
Reverse Transfer Capacitance
––– 130 –––
j Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 380 –––
h Coss eff. (TR) Effective Output Capacitance (Time Related)
––– 610 –––
ns VDD = 49V
ID = 46A
g RG = 6.8
VGS = 10V
pF VGS = 0V
VDS = 50V
ƒ = 1.0MHz
j VGS = 0V, VDS = 0V to 60V
h VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãd (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 80
A MOSFET symbol
D
showing the
––– ––– 310
integral reverse
G
p-n junction diode.
S
––– ––– 1.3
g V TJ = 25°C, IS = 46A, VGS = 0V
––– 33 50 ns TJ = 25°C
VR = 64V,
––– 39 59
TJ = 125°C
––– 32 48 nC TJ = 25°C
g IF = 46A
di/dt = 100A/µs
––– 47 71
TJ = 125°C
––– 1.9 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 46A, di/dt 1920A/µs, VDD V(BR)DSS, TJ 175°C.
temperature. Bond wire current limit is 56A. Note that current
… Pulse width 400µs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
as Coss while VDS is rising from 0 to 80% VDSS.
‚ Repetitive rating; pulse width limited by max. junction
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature.
Coss while VDS is rising from 0 to 80% VDSS.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25, IAS = 46A, VGS =10V. Part not recommended for use
above this value.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C.
2
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Part Number IRFR3607PBF
Description Power MOSFET
Maker International Rectifier
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IRFR3607PBF Datasheet PDF






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