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IRFR3707ZPBF - HEXFET Power MOSFET

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Features

  • s × Vin × f + (Qrr × Vin × f ) ⎝ 2 ⎠.
  • dissipated primarily in Q1. Ploss = (Irms 2 × Rds(on ) ) ⎛ Qgd +⎜I × × Vin × ig ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎞ ⎛ Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1.

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m o .c U 4 t e e h S a at Applications Frequency Synchronous Buck .D High Converters for Computer Processor Power w w High Frequency Isolated DC-DC w Converters with Synchronous Rectification l l l PD - 95443A IRFR3707ZPbF IRFU3707ZPbF HEXFET® Power MOSFET for Telecom and Industrial Use Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings VDS VGS ID @ TC = 25°C IDM ID @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Thermal Resistance RθJC RθJA RθJA m o .c U 4 t e e h S a t a .D w w w 30V 9.5m: D-Pak IRFR3707Z Parameter Max.
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