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IRFR3806PbF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,.

Key Features

  • on temperature, not to exceed Tjmax (assumed as 20 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
  • f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3.
  • BV.
  • Iav) = DT/ ZthJC Iav = 2DT/ [1.3.
  • BV.
  • Zth] EAS (AR) = PD (ave).
  • tav Fig 15. Maximum Avalanche Energy vs. Temperature www. irf. com 5 IRR (A) VGS(th) , Gate threshold Voltag.