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International Rectifier Electronic Components Datasheet

IRFR3806PbF Datasheet

Power MOSFET

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IRFR3806PbF pdf
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
G
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy d
IAR Avalanche Current c
EAR Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case j
RθCS
Case-to-Sink, Flat Greased Surface
RθJA Junction-to-Ambient ij
www.irf.com
PD - 97313
IRFR3806PbF
IRFU3806PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
S ID
60V
12.6m
15.8m
43A
D
S
G
S
D
G
D-Pak
I-Pak
IRFR3806PbF IRFU3806PbF
G
Gate
D
Drain
S
Source
Max.
43
31
170
71
0.47
± 20
24
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
°C
73
25
7.1
Typ.
–––
0.50
–––
Max.
2.12
–––
62
mJ
A
mJ
Units
°C/W
1
03/04/08


International Rectifier Electronic Components Datasheet

IRFR3806PbF Datasheet

Power MOSFET

No Preview Available !

IRFR3806PbF pdf
IRFR/U3806PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
60 ––– ––– V VGS = 0V, ID = 250µA
––– 0.075 ––– V/°C Reference to 25°C, ID = 5mAc
––– 12.6 15.8 mVGS = 10V, ID = 25A f
2.0 ––– 4.0 V VDS = VGS, ID = 50µA
––– ––– 20 µA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 48V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
41 ––– –––
––– 22 30
––– 5.0 –––
––– 6.3 –––
––– 28.3 –––
S VDS = 10V, ID = 25A
nC ID = 25A
VDS = 30V
VGS = 10V f
ID = 25A, VDS =0V, VGS = 10V
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Internal Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related)h –––
Effective Output Capacitance (Time Related)g –––
0.79
6.3
40
49
47
1150
130
67
190
230
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ns VDD = 39V
ID = 25A
RG = 20
VGS = 10V f
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V h
VGS = 0V, VDS = 0V to 60V g
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 43 A MOSFET symbol
D
showing the
––– ––– 170
integral reverse
G
p-n junction diode.
S
––– ––– 1.3
––– 22 33
––– 26 39
––– 17 26
––– 24 36
––– 1.4 –––
V TJ = 25°C, IS = 25A, VGS = 0V f
ns TJ = 25°C
VR = 51V,
TJ = 125°C
IF = 25A
nC TJ = 25°C
di/dt = 100A/µs f
TJ = 125°C
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.23mH
RG = 25, IAS = 25A, VGS =10V. Part not recommended for
use above this value.
ƒ ISD 25A, di/dt 1580A/µs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400µs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
2 www.irf.com


Part Number IRFR3806PbF
Description Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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IRFR3806PbF pdf
IRFR3806PbF Datasheet PDF
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