Download IRFR430APBF Datasheet PDF
IRFR430APBF datasheet preview
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IRFR430APBF Key Features

  • Uninterruptible Power Supply
  • High speed power switching
  • Lead-Free
  • IRFR430APbF IRFU430APbF RDS(on) max 1.7Ω HEXFET® Power MOSFET VDSS 500V ID 5.0A Benefits Low Gate Charge Q
  • Improved Gate, Avalanche and dynamic dv/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche Voltage and Current
  • Effective COSS specified (See AN 1001)
  • D-Pak IRFR430A I-Pak IRFU430A

Other IRFR430APBF Datasheets

Manufacturer Part Number Description
Vishay Siliconix Logo Vishay IRFR430A Power MOSFET
INCHANGE Logo Inchange Semiconductor IRFR430A N-Channel MOSFET
Fairchild Semiconductor Logo Fairchild IRFR430 Power MOSFET
Fairchild Semiconductor Logo Fairchild IRFR430B 500V N-Channel MOSFET

IRFR430APBF Description

130 5.0 11 Units mJ A mJ Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. 1 03/02/07 IRFR/U430APbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage...