Datasheet Summary
- 95950A
IRFR48ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ÿl Lead-Free
IRFU48ZPbF
HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 11mΩ
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
ID = 42A
D-Pak IRFR48ZPbF
I-Pa...
