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International Rectifier Electronic Components Datasheet

IRFS33N15DPbF Datasheet

Power MOSFET

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SMPS MOSFET
PD- 95537
IRFB33N15DPbF
IRFS33N15DPbF
IRFSL33N15DPbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
150V
RDS(on) max
0.056
ID
33A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRFB33N15D
D2Pak
TO-262
IRFS33N15D IRFSL33N15D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Max.
33
24
130
3.8
170
1.1
± 30
4.4
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V input Active Clamp Forward Converter
Notes  through ‡ are on page 11
www.irf.com
1
7/21/04


International Rectifier Electronic Components Datasheet

IRFS33N15DPbF Datasheet

Power MOSFET

No Preview Available !

IRFB/IRFS/IRFSL33N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
150
–––
–––
3.0
–––
–––
–––
–––
––– ––– V
0.18 ––– V/°C
––– 0.056
––– 5.5 V
––– 25
––– 250
µA
––– 100
––– -100
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA †
VGS = 10V, ID = 20A „
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Avalanche Characteristics
14 ––– –––
––– 60 90
––– 17 26
––– 27 41
––– 13 –––
––– 38 –––
––– 23 –––
––– 21 –––
––– 2020 –––
––– 400 –––
––– 91 –––
––– 2440 –––
––– 180 –––
––– 320 –––
S VDS = 50V, ID = 20A
ID = 20A
nC VDS = 120V
VGS = 10V, „†
VDD = 75V
ns ID = 20A
RG = 3.6
VGS = 10V„
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz†
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V …
Parameter
EAS Single Pulse Avalanche Energy‚†
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
330
20
17
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface †
RθJA
Junction-to-Ambient†
RθJA
Junction-to-Ambient‡
Diode Characteristics
––– 0.90
0.50 ––– °C/W
––– 62
––– 40
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) †
––– ––– 33
––– ––– 130
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
VSD Diode Forward Voltage
trr Reverse Recovery Time
––– ––– 1.3 V TJ = 25°C, IS = 20A, VGS = 0V „
––– 150 ––– ns TJ = 25°C, IF = 20A
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
2
––– 920 ––– nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com


Part Number IRFS33N15DPbF
Description Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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