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International Rectifier Electronic Components Datasheet

IRFS7530PbF Datasheet

Power MOSFET

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Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
StrongIRFET™
IRFB7530PbF
IRFS7530PbF
IRFSL7530PbF
HEXFET® Power MOSFET
D
VDSS
60V
RDS(on) typ.
1.65m
G
max
2.00m
ID (Silicon Limited)
295A
S
ID (Package Limited)
195A
GDS
TO-220AB
IRFB7530PbF
G
Gate
D
D
S
G
D2Pak
IRFS7530PbF
D
Drain
S
GD
TO-262
IRFSL7530PbF
S
Source
Base part number Package Type
IRFB7530PbF
IRFSL7530PbF
IRFS7530PbF
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB7530PbF
IRFSL7530PbF
IRFS7530PbF
IRFS7530TRLPbF
7
ID = 100A
6
5
4
TJ = 125°C
3
2
TJ = 25°C
1
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
300
250
Limited by package
200
150
100
50
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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November 7, 2014


International Rectifier Electronic Components Datasheet

IRFS7530PbF Datasheet

Power MOSFET

No Preview Available !

IRFB/S/SL7530PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited) Single Pulse Avalanche Energy 
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case 
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient (TO-220)
Junction-to-Ambient (PCB Mount) (D2-Pak)
Max.
295
208
195
760
375
2.5
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
524
1025
See Fig 15, 16, 23a, 23b
Typ.
–––
0.50
–––
–––
Max.
0.40
–––
62
40
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
IGSS
RG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
60
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
47
1.65
2.10
–––
–––
–––
–––
–––
2.1
Max.
–––
–––
2.00
–––
3.7
1.0
150
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m VGS = 10V, ID = 100A
VGS = 6.0V, ID = 50A
V VDS = VGS, ID = 250µA
µA
VDS =60 V, VGS = 0V
VDS =60V,VGS = 0V,TJ =125°C
nA
VGS = 20V
VGS = -20V

Notes:
 Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
 Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 105µH, RG = 50, IAS = 100A, VGS =10V.
 ISD 100A, di/dt 1338A/µs, VDD V(BR)DSS, TJ 175°C.
 Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 45A, VGS =10V.
2 www.irf.com © 2014 International Rectifier
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November 7, 2014


Part Number IRFS7530PbF
Description Power MOSFET
Maker International Rectifier
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IRFS7530PbF Datasheet PDF






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