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IRFSL3307 - HEXFET Power MOSFET

Download the IRFSL3307 datasheet PDF. This datasheet also covers the IRFB3307 variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • ted for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). ta.

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Note: The manufacturer provides a single datasheet file (IRFB3307_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFSL3307 HEXFET Power MOSFET IRF
IRFSL33N15D Power MOSFET IRF
IRFSL33N15D N-Channel MOSFET INCHANGE
IRFSL3107PbF N-Channel MOSFET INCHANGE
IRFSL31N20D Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFSL3307PbF HEXFET Power MOSFET
IRFSL3307ZPBF HEXFET Power MOSFET
IRFSL3306PBF Power MOSFET
IRFSL33N15DPbF Power MOSFET
IRFSL3004PBF Power MOSFET

Full PDF Text Transcription

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96901C IRFB3307 IRFS3307 IRFSL3307 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 75V 5.0m: 6.
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