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International Rectifier Electronic Components Datasheet

IRFSL4127PbF Datasheet

Power MOSFET

No Preview Available !

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 96177
IRFS4127PbF
IRFSL4127PbF
HEXFET® Power MOSFET
D VDSS
200V
:RDS(on) typ. 18.6m
max. 22m:
S ID
72A
DD
S
G
D2Pak
IRFS4127PbF
S
D
G
TO-262
IRFSL4127PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
cAvalanche Current
fRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
jkJunction-to-Case
ijJunction-to-Ambient
www.irf.com
Max.
72
51
300
375
2.5
± 20
57
-55 to + 175
300
x x10lb in (1.1N m)
250
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.4
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
09/16/08


International Rectifier Electronic Components Datasheet

IRFSL4127PbF Datasheet

Power MOSFET

No Preview Available !

IRFS/SL4127PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
200
–––
–––
3.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG(int)
Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
79
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
hEffective Output Capacitance (Energy Related)
gEffective Output Capacitance (Time Related)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.23
18.6
–––
–––
–––
–––
–––
3.0
Typ.
–––
100
30
31
69
17
18
56
22
5380
410
86
360
590
Max. Units
Conditions
–––
–––
22
5.0
20
250
100
-100
V VGS = 0V, ID = 250µA
™V/°C Reference to 25°C, ID = 5mA
fmVGS = 10V, ID = 44A
V VDS = VGS, ID = 250µA
µA
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
–––
Max. Units
Conditions
––– S VDS = 50V, ID = 44A
150 ID = 44A
f–––
–––
nC
VDS = 100V
VGS = 10V
––– ID = 44A, VDS =0V, VGS = 10V
––– VDD = 130V
f–––
–––
ns
ID = 44A
RG = 2.7
––– VGS = 10V
––– VGS = 0V
––– VDS = 50V
––– pF ƒ = 1.0MHz (See Fig.5)
h––– VGS = 0V, VDS = 0V to 160V (See Fig.11)
g––– VGS = 0V, VDS = 0V to 160V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 76
––– ––– 300
MOSFET symbol
A
showing the
integral reverse
D
G
––– ––– 1.3
––– 136 –––
––– 139 –––
––– 458 –––
––– 688 –––
––– 8.3 –––
p-n junction diode.
fV TJ = 25°C, IS = 44A, VGS = 0V
ns
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
VR = 100V,
fIF = 44A
di/dt = 100A/µs
A TJ = 25°C
S
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.26mH
RG = 25, IAS = 44A, VGS =10V. Part not recommended for use
above this value .
ƒ ISD 44A, di/dt 760A/µs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400µs; duty cycle 2%.
2
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C
‰ RθJC value shown is at time zero
www.irf.com


Part Number IRFSL4127PbF
Description Power MOSFET
Maker International Rectifier
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IRFSL4127PbF Datasheet PDF






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