Download the IRFU2607ZPbF datasheet PDF.
This datasheet also covers the IRFR2607ZPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
G
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 22mΩ.
Note: The manufacturer provides a single datasheet file (IRFR2607ZPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRFU2607ZPbF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRFU2607ZPbF. For precise diagrams, and layout, please refer to the original PDF.
PD - 95953A IRFR2607ZPbF IRFU2607ZPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanc...
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ce l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 22mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRFU2607ZPbF Datasheet
