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IRFU3303PBF - HEXFET Power MOSFET

Download the IRFU3303PBF datasheet PDF (IRFR3303PBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for hexfet power mosfet.

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Note: The manufacturer provides a single datasheet file (IRFR3303PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 95070A IRFR3303PbF IRFU3303PbF l l l l l l l Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.031Ω G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. www.DataSheet4U.com The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
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