IRFU3411 Datasheet - International Rectifier

Power MOSFET

IRFU3411 General Description

G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provide.

IRFU3411 Datasheet (115.80 KB)

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IRFU3411

Manufacturer:

International Rectifier

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115.80 KB

Description:

Power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.

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IRFU3411 Power MOSFET International Rectifier

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IRFU3411 General Description

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