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International Rectifier Electronic Components Datasheet

IRFU3711Z Datasheet

HEXFET Power MOSFET

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IRFU3711Z pdf
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
VDSS
20V
PD - 94651B
IRFR3711Z
IRFU3711Z
HEXFET® Power MOSFET
RDS(on) max Qg
5.7m:
18nC
D-Pak
IRFR3711Z
I-Pak
IRFU3711Z
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes  through … are on page 11
www.irf.com
Max.
20
± 20
93f
66f
370
79
39
0.53
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
3/2/04


International Rectifier Electronic Components Datasheet

IRFU3711Z Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFU3711Z pdf
IRFR/U3711Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
20 ––– ––– V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient ––– 13 ––– mV/°C Reference to 25°C, ID = 1mA
eStatic Drain-to-Source On-Resistance ––– 4.5 5.7 mVGS = 10V, ID = 15A
––– 6.2 7.8
eVGS = 4.5V, ID = 12A
Gate Threshold Voltage
1.55 2.0 2.45 V VDS = VGS, ID = 250µA
Gate Threshold Voltage Coefficient
––– -5.4 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
48 ––– ––– S VDS = 10V, ID = 12A
Qg Total Gate Charge
––– 18 27
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 5.1 –––
VDS = 10V
––– 1.8 ––– nC VGS = 4.5V
––– 6.5 –––
ID = 12A
––– 4.6 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 8.3 –––
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 9.8 ––– nC VDS = 10V, VGS = 0V
––– 12 –––
eVDD = 15V, VGS = 4.5V
––– 13 –––
ID = 12A
––– 15 ––– ns Clamped Inductive Load
tf Fall Time
––– 5.2 –––
Ciss Input Capacitance
––– 2160 –––
VGS = 0V
Coss Output Capacitance
––– 700 ––– pF VDS = 10V
Crss
Reverse Transfer Capacitance
––– 360 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
140
12
7.9
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
fMin. Typ. Max. Units
Conditions
––– ––– 93
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
2
––– ––– 370
A showing the
integral reverse
––– ––– 1.0
––– 19 28
––– 9.4 14
p-n junction diode.
eV TJ = 25°C, IS = 12A, VGS = 0V
ens TJ = 25°C, IF = 12A, VDD = 10V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com


Part Number IRFU3711Z
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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