Datasheet4U Logo Datasheet4U.com

IRFU48Z - Power MOSFET

Download the IRFU48Z datasheet PDF. This datasheet also covers the IRFR48Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ÿl Lead-Free G IRFU48ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 11mΩ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR48Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU48Z N-Channel MOSFET INCHANGE
IRFU410 1.5A / 500V / 7.000 Ohm / N-Channel Power MOSFETs Intersil
IRFU410 N-Channel Power MOSFETs Intersil Corporation
IRFU4104 N-Channel MOSFET INCHANGE
IRFU4105 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFU48ZPBF Power MOSFET
IRFU4104 Power MOSFET
IRFU4104PbF Power MOSFET
IRFU4105 Power MOSFET
IRFU4105PBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95950A IRFR48ZPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ÿl Lead-Free G IRFU48ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 11mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.