IRFU48Z mosfet equivalent, automotive mosfet.
Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax
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VDSS = 55V RDS(on) = 11mΩ
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this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .
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