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IRFU5505 Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRFU5505 datasheet PDF. This datasheet also includes the IRFR5505 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRFR5505_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Overview

PD - 9.1610B IRFR/U5505 HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5505) Straight Lead (IRFU5505) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.

Key Features

  • 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 ( .010) M A M B NOT ES: 0.58 (.023) 0.46 (.018) 2.28 (.090) 4.57 (.180) 1 DIME NSIO NING & T OLE.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRFU5505PBF Power MOSFET
IRFU5305 HEXFET Power MOSFET
IRFU5305PBF Power MOSFET
IRFU540Z HEXFET Power MOSFET
IRFU540ZPbF HEXFET Power MOSFET
IRFU5410 HEXFET Power MOSFET
IRFU5410PBF HEXFET Power MOSFET
IRFU010 Transistor
IRFU012 Transistor
IRFU014 Power MOSFET