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IRFU6215PBF - Power MOSFET

Download the IRFU6215PBF datasheet PDF. This datasheet also covers the IRFR6215PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • ckage Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR6215PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU6215PbF Power MOSFET Infineon
IRFU014 N-Channel MOSFET INCHANGE
IRFU014 Power MOSFET Vishay Siliconix
IRFU014A ADVANCED POWER MOSFET Fairchild Semiconductor
IRFU020 (IRFR020 / IRFU020) Power MOSFET Vishay Siliconix

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFU6215 Power MOSFET
IRFU010 Transistor
IRFU012 Transistor
IRFU014 Power MOSFET
IRFU014PBF HEXFET Power MOSFET

Full PDF Text Transcription

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www.datasheet4u.com PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount (IRFR6215) l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET D VDSS = -150V RDS(on) = 0.295Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
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