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International Rectifier Electronic Components Datasheet

IRFU6215PBF Datasheet

Power MOSFET

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IRFU6215PBF pdf
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l P-Channel
l 175°C Operating Temperature
l Surface Mount (IRFR6215)
l Straight Lead (IRFU6215)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
G
PD-95080A
IRFR6215PbF
IRFU6215PbF
HEXFET® Power MOSFET
D VDSS = -150V
RDS(on) = 0.295
ID = -13A
S
D-PAK
TO-252AA
I-PAK
TO-251AA
Max.
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/14/04


International Rectifier Electronic Components Datasheet

IRFU6215PBF Datasheet

Power MOSFET

No Preview Available !

IRFU6215PBF pdf
www.datasheet4u.com
IRFR/U6215PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
-150
–––
–––
–––
-2.0
3.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– –––
-0.20 –––
––– 0.295
––– 0.58
––– -4.0
––– –––
––– -25
––– -250
––– 100
––– -100
––– 66
––– 8.1
––– 35
14 –––
36 –––
53 –––
37 –––
4.5 –––
7.5 –––
V
V/°C
V
S
µA
nA
nC
ns
nH
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -6.6A „
VGS = -10V, ID = -6.6A „TJ = 150°C
VDS = VGS, ID = -250µA
VDS = -50V, ID = -6.6A†
VDS = -150V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = -6.6A
VDS = -120V
VGS = -10V, See Fig. 6 and 13 „†
VDD = -75V
ID = -6.6A
RG = 6.8
RD = 12Ω, See Fig. 10 „†
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact…
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 860 –––
––– 220 –––
––– 130 –––
VGS = 0V
pF VDS = -25V
ƒ = 1.0MHz, See Fig. 5†
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) †
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -13
––– ––– -44
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– -1.6 V TJ = 25°C, IS = -6.6A, VGS = 0V „
––– 160 240 ns TJ = 25°C, IF = -6.6A
––– 1.2 1.7 µC di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by „ Pulse width 300µs; duty cycle 2%
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 14mH
RG = 25, IAS = -6.6A. (See Figure 12)
… This is applied for I-PAK, LS of D-PAK is measured between lead and
center of die contact
ƒ ISD -6.6A, di/dt -620A/µs, VDD V(BR)DSS, † Uses IRF6215 data and test conditions
TJ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material )
For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com


Part Number IRFU6215PBF
Description Power MOSFET
Maker International Rectifier
Total Page 11 Pages
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