IRFU6215PBF mosfet equivalent, power mosfet.
TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D..
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead.
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HEXFET® Power MOSFET
D
VDSS = -150V RDS(on) = 0.295Ω
G
ID = -13A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combin.
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