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International Rectifier Electronic Components Datasheet

IRFU7440PbF Datasheet

HEXFET Power MOSFET

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StrongIRFET™
IRFR7440PbF
IRFU7440PbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l PWM Inverterized topologies
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Electronic ballast applications
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dv/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant containing no Lead, no Bromide,
and no Halogen
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
max.
ID (Silicon Limited)
1.9mΩ
2.4mΩ
c180A
S
ID (Package Limited)
90A
DD
S
G
D-Pak
IRFR7440PbF
S
D
G
I-Pak
IRFU7440PbF
G
Gate
D
Drain
S
Source
Base Part Number
IRFR7440PbF
IRFU7440PbF
Package Type
D-PAK
I-PAK
Standard Pack
Form
Tube/Bulk
Tape and Reel
Tube/Bulk
Quantity
75
2000
75
Orderable Part Number
IRFR7440PbF
IRFR7440TRPbF
IRFU7440PbF
8
ID = 90A
6
4
TJ = 125°C
2
TJ = 25°C
0
4
8 12 16 20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
180
160
140
120
100
80
60
40
20
0
25
LIMITED BY PACKAGE
50 75 100 125 150
TC, Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
May 1, 2014


International Rectifier Electronic Components Datasheet

IRFU7440PbF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFR7440PbF/IRFU7440PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
dContinuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
EAS (tested)
IAR
EAR
eSingle Pulse Avalanche Energy
lSingle Pulse Avalanche Energy Tested Value
dAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
R8JC
R8JA
R8JA
Parameter
kJunction-to-Case
jJunction-to-Ambient (PCB Mount)
kJunction-to-Ambient
Max.
c180
c125
90
760
140
0.95
± 20
4.4
-55 to + 175
300
160
220
See Fig 15,16, 23a, 23b
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
28
1.9
2.8
3.0
–––
–––
–––
–––
2.6
ÃdMax. Units
Conditions
––– V VGS = 0V, ID = 250μA
––– mV/°C Reference to 25°C, ID = 1mA
g2.4 mΩ VGS = 10V, ID = 90A
g––– mΩ VGS = 6.0V, ID = 50A
3.9 V VDS = VGS, ID = 100μA
1 μA VDS = 40V, VGS = 0V
150 VDS = 40V, VGS = 0V, TJ = 125°C
100 nA VGS = 20V
-100
VGS = -20V
––– Ω
Notes:
 Calculated continuous current based on maximum allowable junction … Pulse width 400μs; duty cycle 2%.
temperature. Bond wire current limit is 90A. Note that current
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with
as Coss while VDS is rising from 0 to 80% VDSS.
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.04mH
mended footprint and soldering techniques refer to application note #AN-994.
RG = 50Ω, IAS = 90A, VGS =10V.
„ ISD 100A, di/dt 1306A/μs, VDD V(BR)DSS, TJ 175°C.
‰ Rθ is measured at TJ approximately 90°C.
Š This value determined from sample failure population,
starting TJ = 25°C, L= 0.04mH, RG = 50Ω, IAS = 90A, VGS =10V.
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 1, 2014


Part Number IRFU7440PbF
Description HEXFET Power MOSFET
Maker International Rectifier
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