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International Rectifier Electronic Components Datasheet

IRFY440CM Datasheet

POWER MOSFET N-CHANNE

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IRFY440CM pdf
Provisional Data Sheet No. PD 9.1292B
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HEXFET® POWER MOSFET
IRFY440CM
N-CHANNEL
500 Volt, 0.85HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
Product Summary
Part Number
IRFY440CM
BVDSS
500V
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability.They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
Features
n Hermetically sealed
n Electrically isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic eyelets
RDS(on)
0.85
ID
7.0A
Absolute Maximum Ratings
Parameter
IRFY440CM
ID @ VGS=10V, TC = 25°C
ID @ VGS=10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
7.0
4.4
28
100
0.8
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalance Energy ‚
Avalance Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
±20
510
7.0
10
3.5
TJ
Tstg
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in (1.6mm) from case for 10 sec)
Weight
4.3(typical)
Units
A
W
W/K…
V
mJ
A
mJ
V/ns
°C
g


International Rectifier Electronic Components Datasheet

IRFY440CM Datasheet

POWER MOSFET N-CHANNE

No Preview Available !

IRFY440CM pdf
IRFY440CM Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
www.DataSPhaereat4mUe.ctoemr
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min
500
2.0
4.7
27.3
2.0
11.1
Typ Max Units
Test Conditions
——
0.78 —
V VGS = 0V, ID = 1.0mA
V/°C Reference to 25°C, ID = 1.0mA
— 0.85
— 0.95
— 4.0
——
— 25
— 250
— 100
— -100
— 68.5
— 12.5
— 42.4
— 21
— 73
— 72
— 51
8.7 —
8.7 —
1300
310
120
V
S( )
µA
nA
nC
ns
VGS = 10V, ID = 4.4A „
VGS = 10V, ID = 7.0A
VDS = VGS, ID = 250µA
VDS 15V, IDS = 4.4A „
VDS = 0.8 x max. rating,VGS = 0V
VDS = 0.8 x max. rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 7.0A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = 250V, ID = 7.0A, RG = 9.1
VGS = 10V
nH
pF
see figure 10
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
Modified MOSFET symbol
showing the internal
inductances.
VGS = 0v, VDS = 25V
f = 1.0MHz.
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) 
— — 7.0
— — 28
A Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.5 V Tj = 25°C, IS = 7.0A, VGS = 0V „
— — 700 ns Tj = 25°C, IF = 7.0A, di/dt 100 A/µs
— — 8.9 µC VDD 50 V „
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
RthJA Junction-to-Ambient
RthCS Case-to-Sink
Min Typ Max Units
— — 1.25
— — 80 K/W
— 0.21 —
Test Conditions
Typical socket mount
Mounting surface flat, smooth


Part Number IRFY440CM
Description POWER MOSFET N-CHANNE
Maker International Rectifier
Total Page 6 Pages
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