IRFY440CM Datasheet POWER MOSFET N-CHANNE

Manufacturer: International Rectifier (now Infineon)

IRFY440CM power mosfet n-channe by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRFY440CM
Manufacturer	International Rectifier (now Infineon)
File Size	259.05 KB
Description	POWER MOSFET N-CHANNE
Download	IRFY440CM Download (PDF)

Overview

Provisional Data Sheet No.

PD 9.1292B HEXFET® POWER MOSFET www.DataSheet4U.com IRFY440CM N-CHANNEL 500 Volt, 0.85 Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance combined with high transconductance.

Key Features

n n n n n Hermetically sealed Electrically isolated Simple Drive Requirements Ease of Paralleling Ceramic eyelets Absolute Maximum Ratings Parameter I D @ VGS=10V, TC = 25°C I D @ VGS=10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tstg IRFY440CM Units A W W/K V mJ A mJ V/ns °C g Continuous Drain Current 7.0 Continuous Drain Current 4.4 Pulsed Drain Current 28 Max. Power Dissipation 100 Linear Derating Factor 0.8 Gate-to-Source Voltage ±20 Single Pulse Avalance Energy 510.

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