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IRFY9240CM Datasheet P-CHANNEL POWER MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview

Provisional Data Sheet No.

PD 9.1295A www.DataSheet4U.com HEXFET® POWER MOSFET -200 Volt, 0.51Ω HEXFET International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance combined with high transconductance.

Key Features

  • n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter I D @ VGS= -10V, TC = 25°C I D @ VGS= -10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tstg IRFY9240CM Units A W W/K… V mJ A mJ V/ns °C g Continuous Drain Current -9.4 Continuous Drain Current -6.0 Pulsed Drain Current  -36 Max. Power Dissipation 100 Linear Derating Factor 0.8 Gate-to-Source Voltage ±20 Single Pulse Avalance Energy ‚ 700 Avalance C.