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IRFZ14S - Power MOSFET

Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • subject to change without notice. 8/97.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ14 HEXFET Power MOSFET
IRFZ14L Power MOSFET
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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PD - 9.890A IRFZ14S/L HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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