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IRFZ34L - Power MOSFET

Download the IRFZ34L datasheet PDF. This datasheet also covers the IRFZ34S variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ34S_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ34L Power MOSFET Vishay
IRFZ34 Power MOSFET Fairchild Semiconductor
IRFZ34 N-Channel Power MOSFET Samsung Electronics
IRFZ34 Power MOSFET Vishay
IRFZ34A Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ34 Power MOSFET
IRFZ34E Power MOSFET
IRFZ34EPBF Power MOSFET
IRFZ34N Power MOSFET
IRFZ34NL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 9.892A IRFZ34S/L HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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