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IRFZ34VLPBF - (IRFZ34VLPBF / IRFZ34VSPBF) Power MOSFET

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • tion indicates "Lead-F ree" INT E RNAT IONAL RECT IF IE R LOGO ASS E MBLY LOT CODE PART NUMB ER F 530S DAT E CODE YEAR 0 = 2000 WE EK 02 LINE L OR INTE RNAT IONAL RECT IFIE R LOGO AS S EMBLY LOT CODE PART NUMBE R F530S DAT E CODE P = DES IGNATE S LEAD-F REE.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ34VL POWER MOSFET
IRFZ34V Power MOSFET
IRFZ34VPBF HEXFET Power MOSFET
IRFZ34VS POWER MOSFET
IRFZ34VSPBF (IRFZ34VLPBF / IRFZ34VSPBF) Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95560 l Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description l HEXFET Power MOSFET D IRFZ34VSPbF IRFZ34VLPbF ® VDSS = 60V RDS(on) = 28mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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