(.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M B A M 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. .

l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.028Ω G S ID = 50*A Advanced HEXFET® Power M.

l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.028Ω G S ID = 50*A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined.

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