IRG4BC10K Datasheet - International Rectifier

Short Circuit Rated UltraFast IGBT

* Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

* Generation 4 IGBT design provides higher efficiency than Generation 3

* Industry standard TO-220AB package C Short Circuit Rated UltraFas

IRG4BC10K

International Rectifier

183.78 KB

Short circuit rated ultrafast igbt.

📁 Related Datasheet

IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10KDPBF HEXFET Power MOSFET (International Rectifier)

IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10SD-L (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10SD-LPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10SD-S (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10SD-SPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10SDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC10UD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC15MD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

TAGS

Image Gallery