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PD - 91733A
IRG4BC10K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-220AB package
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.