Datasheet Summary
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- 91733A
INSULATED GATE BIPOLAR TRANSISTOR
Features
- Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
- Generation 4 IGBT design provides higher efficiency than Generation 3
- Industry standard TO-220AB package
Short Circuit Rated UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A n-channel
Benefits
- Generation 4 IGBTs offer highest efficiency available
- IGBTs optimized for specified application conditions
TO-220AB...