IRG4BC10SDPBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* C Standard Speed CoPack IGBT VCES = 600V

* Extremely low voltage drop 1.1Vtyp. @ 2A

* S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.

* Very Tight Vce(on) distribution

* IGBT co-packaged with

IRG4BC10SDPBF

International Rectifier

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Insulated gate bipolar transistor.

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