IRG4BC15UD transistor equivalent, insulated gate bipolar transistor.
* UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching
* IGBT Co-packaged with ultra-soft-recovery antiparallel diode
* Industry stand.
* High noise immune "Positive Only" gate driveNegative bias gate drive not necessary
* For Low EMI designs- requ.
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