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IRG4BC15UDPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 95613 IRG4BC15UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

IRG4BC15UDPBF datasheet preview

Datasheet Details

Part number	IRG4BC15UDPBF
Manufacturer	International Rectifier (now Infineon)
File Size	289.63 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC15UDPBF_InternationalRectifier.pdf

Key Features

UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching.
IGBT Co-packaged with ultra-soft-recovery antiparallel diode.
Industry standard TO-220AB package.
Lead-Free C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.8A Benefits Best Value for Appliance and Industrial.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4BC15UD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD-L	(IRG4BC15UD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD-LPBF	(IRG4BC15UD-LPBF / IRG4BC15UD-SPBF) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD-S	(IRG4BC15UD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15UD-SPBF	(IRG4BC15UD-LPBF / IRG4BC15UD-SPBF) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15MD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15MDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10K	Short Circuit Rated UltraFast IGBT
IRG4BC10KD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10KDPBF	HEXFET Power MOSFET

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