IRG4MC30F transistor equivalent, fast speed igbt - insulated gate bipolar transistor.
C
* Electrically Isolated and Hermetically Sealed
* Simple Drive Requirements
* Latch-proof
* Fast Speed Operation 3 kHz - 8 kHz
* High Operating Fr.
VCES = 600V VCE(on) max =1.7V @VGE = 15V, IC = 15A
TO-254AA
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 1.
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