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IRG4PC50F-EPBF Datasheet Fast Speed IGBT

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 96168 IRG4PC50F-EPbF INSULATED GATE BIPOLAR TRANSISTOR.

IRG4PC50F-EPBF datasheet preview

Datasheet Details

Part number	IRG4PC50F-EPBF
Manufacturer	International Rectifier (now Infineon)
File Size	344.54 KB
Description	Fast Speed IGBT
Datasheet	IRG4PC50F-EPBF-InternationalRectifier.pdf

Key Features

Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AD package Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified.

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More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4PC50FDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50FPBF	Fast Speed IGBT
IRG4PC50K	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50KDPBF	UltraFast IGBT
IRG4PC50KPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50SDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50SPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50UDPBF	INSULATED GATE BIPOLAR TRANSISTOR
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