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IRG4PH20KD - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V.
  • Combines low conduction losses with high switching speed.
  • Tighter parameter distribution and higher efficiency than previous generations.
  • IGBT co-packaged with.

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PD- 91777 IRG4PH20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ. = 3.17V @VGE = 15V, IC = 5.0A n-ch an nel Benefits • Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses www.DataSheet4U.
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