IRG4PH30K Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: www.DataSheet4U.com PD -91580A IRG4PH30K INSULATED GATE BIPOLAR.

Datasheet Details

Part number	IRG4PH30K
Manufacturer	International Rectifier (now Infineon)
File Size	357.88 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PH30K_InternationalRectifier.pdf

Key Features

High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V.
Combines low conduction losses with high switching speed.
Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ. = 3.10V @VGE = 15V, IC = 10A n-channel Benefits.
As a Freewheeling Diode we recommend our.

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