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IRG4PH30K - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG4PH30K INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG4PH30K

Datasheet Details

Part number	IRG4PH30K
Manufacturer	International Rectifier
File Size	357.88 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4PH30K Datasheet
Additional preview pages of the IRG4PH30K datasheet.

Product details

Features

High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V.
Combines low conduction losses with high switching speed.
Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ. = 3.10V @VGE = 15V, IC = 10A n-channel Benefits.
As a Freewheeling Diode we recommend our.

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Published: Aug 8, 2006 |