Datasheet Summary
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PD -91580A
INSULATED GATE BIPOLAR TRANSISTOR
Features
- High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V
- bines low conduction losses with high switching speed
- Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
Short Circuit Rated UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.10V
@VGE = 15V, IC = 10A n-channel
Benefits
- As a Freewheeling Diode we remend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT
- Latest generation 4 IGBT's offer highest power density...