Datasheet Summary
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PD- 91579A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V
- bines low conduction losses with high switching speed
- Tighter parameter distribution and higher efficiency than previous generations
- IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
Short Circuit Rated UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.10V
@VGE = 15V, IC = 10A n-ch an nel
Benefits
- Latest generation 4 IGBT's offer highest power density motor controls possible
- HEXFREDTM diodes optimized for performance...