IRG4PH50KDPBF transistor equivalent, insulated gate bipolar transistor.
Short Circuit Rated UltraFast IGBT
C
VCES = 1200V
G E
VCE(on) typ. = 2.77V
@VGE = 15V, IC = 24A
n-ch an nel
Benefits
* Latest generation 4 IGBT's offer highest p.
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