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International Rectifier Electronic Components Datasheet

IRG4PH50KDPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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IRG4PH50KDPBF pdf
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PD- 95189
IRG4PH50KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
• Lead-Free
C
G
E
n-channel
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGPH50KD2 and IRGPH50MD2
products
AbFosrohliunttsesMeeadxeimsigunmtipR9a70ti0n3gs
Short Circuit Rated
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 2.77V
@VGE = 15V, IC = 24A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
45
24
90
90
16
90
10
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.64
0.83
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
1
04/26/04
Datasheet pdf - http://www.DataSheet4U.net/


International Rectifier Electronic Components Datasheet

IRG4PH50KDPBF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4PH50KDPBF pdf
www.DataSheet.co.kr
IRG4PH50KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
1200
3.0
13
0.91
2.77
3.28
2.54
-10
19
2.5
2.1
—V
— V/°C
3.5
—V
6.0
— mV/°C
—S
250 µA
6500
3.5 V
3.0
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 24A
VGE = 15V
IC = 45A
See Fig. 2, 5
IC = 24A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 24A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 16A
See Fig. 13
IC = 16A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 180 270
IC = 24A
— 25 38 nC VCC = 400V
See Fig.8
— 70 110
— 87 —
VGE = 15V
— 100 —
ns TJ = 25°C
— 140 300
IC = 24A, VCC = 800V
— 200 300
— 3.83 —
VGE = 15V, RG = 5.0
Energy losses include "tail"
— 1.90 — mJ and diode reverse recovery
— 5.73 7.9
See Fig. 9,10,18
10 — —
µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 5.0
— 67 —
— 72 —
— 310 —
— 390 —
TJ = 150°C, See Fig. 10,11,18
ns
IC = 24A, VCC = 800V
VGE = 15V, RG = 5.0Ω,
Energy losses include "tail"
— 8.36 — mJ and diode reverse recovery
— 13 — nH Measured 5mm from package
— 2800 —
— 140 —
VGE = 0V
pF VCC = 30V
See Fig. 7
— 53 —
ƒ = 1.0MHz
— 90 135 ns TJ = 25°C See Fig.
— 164 245
TJ = 125°C 14
— 5.8 10 A TJ = 25°C See Fig.
IF = 16A
— 8.3 15
TJ = 125°C 15
VR = 200V
— 260 675 nC TJ = 25°C See Fig.
— 680 1838
TJ = 125°C
16 di/dt = 200A/µs
— 120 — A/µs TJ = 25°C See Fig.
— 76 —
TJ = 125°C 17
2 www.irf.com
Datasheet pdf - http://www.DataSheet4U.net/


Part Number IRG4PH50KDPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
Total Page 11 Pages
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