IRG4PSC71UD transistor equivalent, insulated gate bipolar transistor.
* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations
* IGBT c.
t vs. dif/dt
10000
VR = 2 0 0 V T J = 1 2 5 °C TJ = 2 5 °C
3000
VR = 20 0 V T J = 1 2 5 °C T J = 2 5 °C
di (rec) M/dt.
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