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International Rectifier Electronic Components Datasheet

IRG4PSH71UD Datasheet

UltraFast Copack IGBT

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PD - 91686
IRG4PSH71UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast Copack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
multiple, paralleled IGBTs
• HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
C
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.52V
@VGE = 15V, IC = 50A
SUPER - 247
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
ÙPulse Collector Current
dClamped Inductive Load current
VGE Gate-to-Emitter Voltage
IF @ Tc = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
1200
99
50
200
200
±20
70
200
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
RθJC
RθCS
RθJA
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Wt Weight
www.irf.com
Min.
–––
–––
–––
–––
20 (2.0)
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.36
0.36
–––
38
–––
Units
°C/W
N (kgf)
g (oz.)
1
5/24/04


International Rectifier Electronic Components Datasheet

IRG4PSH71UD Datasheet

UltraFast Copack IGBT

No Preview Available !

IRG4PSH71UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Min. Typ. Max. Units Conditions
Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
19 — — V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.78 — V/°C VGE = 0V, IC = 1mA
— 2.52 2.70 V IC = 70A
VGE = 15V
VCE(on)
Collector-to-Emitter Saturation Voltage
— 3.17 —
IC = 140A
See Fig.2, 5
— 2.68 —
IC = 70A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
fgfe Forward Transconductance
— -9.2 — mV/°C VCE = VGE, IC = 1.0mA
48 72 — S VCE = 100V, IC = 70A
ICES
Zero Gate Voltage Collector Current
— — 500 µA VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V
— — 5000
VGE = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 2.92 3.9 V IF = 70A See Fig.13
— 2.88 3.7
IF = 70A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on)
— 380 570
IC = 70A
Qge Gate-to-Emitter Charge (turn-on)
— 61 24 nC VCC = 400V
See Fig.8
Qgc
Gate-to-Collector Charge (turn-on)
— 130 200
VGE = 15V
td(on)
Turn-On delay time
— 46 —
IC = 70A, VCC = 960V
tr Rise time
— 77 — ns VGE = 15V, RG = 5.0
td(off)
Turn-Off delay time
— 250 350
Energy losses include "tail"
tf Fall time
— 220 330
See Fig. 9, 10, 11, 14
Eon Turn-On Switching Loss
— 8.8 —
Eoff Turn-Off Switching Loss
— 9.4 — mJ
Etot Total Switching Loss
— 18.2 19.7
td(on)
Turn-On delay time
— 43 —
TJ = 150°C, See Fig. 9, 10, 11, 14
tr Rise time
— 78 — ns IC = 70A, VCC = 960V
td(off)
Turn-Off delay time
— 330 —
VGE = 15V, RG = 5.0
tf Fall time
— 480 —
Energy losses include "tail"
ETS Total Switching Loss
— 26 — mJ
LE Internal Emitter Inductance
— 13 — nH Measured 5mm from package
Cies Input Capacitance
— 6640 —
VGE = 0V
Coes Output Capacitance
— 420 — pF VCC = 30V, See Fig.7
Cres Reverse Transfer Capacitance
— 60 —
f = 1.0MHz
trr Diode Reverse Recovery Time
— 110 170 ns TJ=25°C
See Fig
— 180 270
TJ=125°C
14
IF = 70A
Irr
Diode Peak Reverse Recovery Current
— 6.0 9.0 A TJ=25°C
See Fig
— 8.9 13
TJ=125°C
15 VR = 200V
Qrr
Diode Reverse Recovery Charge
— 350 530 nC TJ=25°C
See Fig
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
— 870 1300
TJ=125°C
— 150 230 A/µs TJ=25°C
16
See Fig
di/dt = 200A/µs
During tb
2
— 130 200
TJ=125°C
17
www.irf.com


Part Number IRG4PSH71UD
Description UltraFast Copack IGBT
Maker International Rectifier
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IRG4PSH71UD Datasheet PDF






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