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IRG71C28U - PDP TRENCH IGBT

This page provides the datasheet information for the IRG71C28U, a member of the IRG7IC28UPBF PDP TRENCH IGBT family.

Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low CVE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Features

  • l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Energy Recovery circuits in PDP.

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Full PDF Text Transcription

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PDP TRENCH IGBT PD - 97562 IRG7IC28UPbF Features l Advanced Trench IGBT Technology Key Parameters VCE min 600 V l Optimized for Sustain and Energy Recovery circuits in PDP applications c VCE(ON) typ. @ IC = 40A IRP max @ TC= 25°C 1.70 225 V A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l Lead Free package C G E n-channel CE G TO-220AB Full-Pak G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low CVE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
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