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International Rectifier Electronic Components Datasheet

IRG71C28U Datasheet

PDP TRENCH IGBT

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PDP TRENCH IGBT
PD - 97562
IRG7IC28UPbF
Features
l Advanced Trench IGBT Technology
Key Parameters
VCE min
600
V
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
c VCE(ON) typ. @ IC = 40A
IRP max @ TC= 25°C
1.70
225
V
A
l Low VCE(on) and Energy per Pulse (EPULSETM)
TJ max
150
°C
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
C
G
E
n-channel
CE
G
TO-220AB
Full-Pak
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low CVE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
c Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
RθJA
d Junction-to-Case
d Junction-to-Ambient
Max.
±30
25
12
225
40
16
0.32
-40 to + 150
300
x x 10lb in (1.1N m)
Typ.
–––
–––
Max.
3.1
65
Units
V
A
W
W/°C
°C
N
Units
°C/W
www.irf.com
1
09/02/2010
http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRG71C28U Datasheet

PDP TRENCH IGBT

No Preview Available !

IRG7IC28UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
V(BR)ECS
∆ΒVCES/TJ
VCE(on)
VGE(th)
Collector-to-Emitter Breakdown Voltage 600
e Emitter-to-Collector Breakdown Voltage 15
Breakdown Voltage Temp. Coefficient –––
–––
–––
Static Collector-to-Emitter Voltage
–––
–––
–––
Gate Threshold Voltage
2.2
––– –––
––– –––
0.57 –––
1.25 –––
1.42 –––
1.70 1.95
1.96 –––
2.97 –––
1.75 –––
––– 4.7
V VGE = 0V, ICE = 1.0mA
V VGE = 0V, ICE = 1.0A
V/°C Reference to 25°C, ICE = 1.0mA
e VGE = 15V, ICE = 12A
e VGE = 15V, ICE = 24A
e V VGE = 15V, ICE = 40A
e VGE = 15V, ICE = 70A
e VGE = 15V, ICE = 160A
e VGE = 15V, ICE = 40A, TJ = 150°C
V VCE = VGE, ICE = 250µA
VGE(th)/TJ Gate Threshold Voltage Coefficient
ICES
Collector-to-Emitter Leakage Current
––– -11 ––– mV/°C
––– 0.5 20
VCE = 600V, VGE = 0V
––– 30 ––– µA VCE = 600V, VGE = 0V, TJ = 100°C
––– 90
VCE = 600V, VGE = 0V, TJ = 125°C
––– 305 –––
VCE = 600V, VGE = 0V, TJ = 150°C
IGES
Gate-to-Emitter Forward Leakage
––– ––– 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage
––– ––– -100
VGE = -30V
gfe
Forward Transconductance
Qg
Total Gate Charge
–––
–––
55
70
–––
–––
e S VCE = 25V, ICE = 40A
nC VCE = 400V, IC = 40A, VGE = 15V
Qgc
Gate-to-Collector Charge
––– 25 –––
td(on)
Turn-On delay time
tr
Rise time
td(off)
Turn-Off delay time
tf
Fall time
––– 30 –––
––– 35 –––
––– 260 –––
––– 145 –––
IC = 40A, VCC = 400V
ns RG = 22, L=100µH
TJ = 25°C
td(on)
tr
td(off)
tf
tst
EPULSE
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
––– 25 –––
––– 40 –––
––– 280 –––
––– 320 –––
100 ––– –––
––– 770 –––
––– 930 –––
IC = 40A, VCC = 400V
ns RG = 22, L=100µH
TJ = 150°C
ns VCC = 240V, VGE = 15V, RG= 5.1
L = 220nH, C= 0.40µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
ESD
Human Body Model
Machine Model
Class H1C (2000V)
(Per JEDEC standard JESD22-A114)
Class M4 (425V)
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
––– 1880 –––
––– 75 –––
––– 45 –––
VGE = 0V
pF VCE = 30V
ƒ = 1.0MHz
LC
Internal Collector Inductance
––– 4.5 –––
Between lead,
nH 6mm (0.25in.)
LE
Internal Emitter Inductance
––– 7.5 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle <= 0.02, ton=1.0µsec.
‚ Rθ is measured at TJ of approximately 90 °C.
ƒ Pulse width 400µs; duty cycle 2%.
2
www.irf.com


Part Number IRG71C28U
Description PDP TRENCH IGBT
Maker International Rectifier
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