IRG7PH35UD1-EP - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG7PH35UD1-EP
Manufacturer	International Rectifier ↗
File Size	430.92 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH35UD1-EP_InternationalRectifier.pdf

Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C G E TJ(max) = 150°C n-channel C VCE(on) typ. = 1.9V Benefits.
Device optimized for induction heating and soft switching.

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Published: Apr 25, 2011 |