IRG7PH37K10DPBF, IRG7PH37K10D-EPBF Datasheet - International Rectifier

IRG7PH37K10DPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH37K10DPBF Features

* Low VCE(ON) and Switching Losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH37K10DPBF IRG7PH37K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC =

IRG7PH37K10D-EPBF-InternationalRectifier.pdf

IRG7PH37K10DPBF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRG7PH37K10DPBF, IRG7PH37K10D-EPBF. Please refer to the document for exact specifications by model.

IRG7PH37K10DPBF Datasheet Preview Page 2

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Datasheet Details

Part number:

IRG7PH37K10DPBF, IRG7PH37K10D-EPBF

Manufacturer:

International Rectifier

File Size:

656.05 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRG7PH37K10DPBF, IRG7PH37K10D-EPBF.
Please refer to the document for exact specifications by model.

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